Plenary and Invited Speakers

Plenary Speakers

Hiroshi Amano, Nagoya University, Japan
GaN as A Key Material for Realizing Internet of Energy
Abstract & Biography
Erik Bakkers, Eindhoven University of Technology, The Netherlands
Bottom-Up Grown Nanowire Quantum Devices
Abstract & Biography
Raymond G. Beausoleil, Hewlett Packard Enterprise, USA
Large-Scale Integrated Photonics for Accelerated Communication and Computing
Abstract & Biography
James Harris, Stanford University, USA
Materials and Device Challenges for Next Generation LIDARS
Abstract & Biography

Invited Speakers

A: Epitaxy, fabrication, and related technologies
  • Zakaria Y. Al Balushi, University of California, Berkeley, USA
    Graphene Stabilized Two-Dimensional Crystals
  • D. Scott Katzer, Naval Research Laboratory, USA
    Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications
  • Roger Loo, IMEC Interuniversity Microelectronics Centre, Belgium
    Epitaxial Growth of (Si)GeSn Source/Drain Layers for Advanced Ge Gate All Around Devices
  • Katsunori Makihara, Nagoya University, Japan
    Formation and Characterization of Si Quantum Dots with Ge Core for Electroluminescent Devices
  • Zetian Mi, The University of Michigan, USA
    III-Nitride Nanocrystals: From Low Threshold Ultraviolet Laser Diodes to High Efficiency Artificial Photosynthesis
B: RF electron devices
  • Edward Yi Chang, National Chiao Tung University, Taiwan
    High-Performance In0.53Ga0.47As FinFETs for Logic and RF Applications
  • Arnulf Leuther, Fraunhofer Institute for Applied Solid State Physics IAF, Germany
    THz Frequency HEMTs: Future Trends and Applications
  • Hiroshi Yamamoto, Sumitomo Electric Industries, LTD., Japan
    GaN HEMT Characterization for Base Stations
C: High power electron devices
  • Thomas Detzel, Infineon Technologies, Austria
    The Commercialization of GaN Power Devices: Value Proposition, Manufacturing, and Reliability
  • Masahiko Kuraguchi, Toshiba, Japan
    Improvement of Channel Mobility and Reliability in GaN-MOSFETs
  • Luca Nela, École Polytechnique Fédéral de Lausanne (EPFL) , Switzerland
    High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs
D: Photonic devices and related technologies
  • Brian Corbett, Tyndall National Institute, Ireland
    Transfer Printing of III-V Devices for Silicon Photonics
  • Yuqing Jiao, Eindhoven University of Technology, The Neterlands
    InP Membrane Lasers and Active-Passive Integration
  • Hidenori Mizuno, National Institute of Advanced Industrial Science and Technology, Japan
    Smart Stack Technology for III-V/Si Multi-Junction Solar Cells
  • Masahiro Nada, NTT, Japan
    High-speed Avalanche Photodiodes Based on III-V Compounds for Optical Communications
  • Kazuhiko Naoe, Device Development Center, Lumentum, Japan
    Uncooled 53-Gbaud PAM4 Operation of EA/DFB and Directly Modulated DFB Laser for 400GbE Applications
  • Minh Tran, University of California, Santa Barbara, USA
    Ultra-low Noise Widely-Tunable Semiconductor Lasers Fully Integrated on Silicon
  • Siyuan Yu, University of Bristol, UK
    Multi-Wavelength DFB Laser Array in InAs/GaAs Quantum Dot Material Epitaxially Grown on Silicon
E: Physics, spintronics, and novel device concepts
  • Deep Jariwala, University of Pennsylvania, USA
    Atomically-Thin Photovoltaics: Progress, Promise and Interface Physics
  • Takashi Nakajima, RIKEN, Japan
    Coherent Control of a GaAs Quantum Dot Spin Qubit Operated in a Feedback Loop
  • Fabrizio Nichele, IBM Zurich Research Laboratory, Switzerland
    Superconductor/Semiconductor Devices for Majorana Zero Modes
  • Gian Salis, IBM Zurich Research Laboratory, Switzerland
    Universal Nuclear Focusing of Confined Electron Spins
F: Nanocharacterization and nanostructures
  • Antonio Hurtado, University of Strathclyde, UK
    Nanoscale Transfer Printing for the Heterogeneous Integration of Semiconductor Nanowire Lasers
  • Fangfang Ren, Nanjing University, China
    Low-threshold Vertical Lasing from InP Nanowire Embedded in Cat’s Eye Antenna
  • Jesper Wallentin, Lund University, Sweden
    Characterization of Nanowire Devices Using Nano-Focused X-Ray Beams
G: GaN and related semiconductors
  • Srabanti Chowdhury, Stanford University, USA
    Processing of GaN Vertical Devices: Static Induction Transistors
  • Tamotsu Hashizume, Hokkaido University, Japan
    MOS Interface Control for GaN Power Transistors
  • Tomasz Sochacki, Institute of High Pressure Physics Polish Academy of Sciences, Poland
    GaN Substrates of The Highest Structural Quality
  • Akira Uedono, University of Tsukuba, Japan
    Vacancy-Type Defects in GaN-Based Power Device Structure – Defect Characterization in Ion Implanted GaN and Al2O3/GaN –
H: Oxide semiconductors
  • Elżbieta Guziewicz, Institute of Physics, Polish Academy of Sciences, Poland
    Zinc Oxide Grown by ALD – from Heavily N-Type to P-Type Material
  • Farida Selim, Bowling Green State University, USA
    Hydrogen in Semiconducting Oxides
  • Atsushi Tsukazaki, Tohoku University, Japan
    Interface Engineering of Sn-Based Oxide Semiconductors
I: Nanocarbon and novel 2D materials
  • Tomoki Machida, The University of Tokyo, Japan
    Mid-Infrared Photoresponse and Robotic Fabrication of Graphene/h-BN van der Waals Heterostructures
  • Masaki Nakano, The University of Tokyo, Japan
    Emergent Transport Phenomena in MBE-Grown 2D Materials and Their Heterostructures
J: Organic semiconductors and flexible materials
  • Hiroaki Iino, Tokyo Institute of Technology, Japan
    Liquid Crystals as Polycrystalline Materials for Organic Thin Film Transistors
  • Takafumi Uemura, Osaka University, Japan
    Ultraflexible Biosignal Amplifier Based on Organic Thin-Film Transistors
SS1: (Special session) Gallium oxide: materials and devices
  • Gregg H. Jessen, Air Force Research Laboratory, USA
    Pulsed RF Power Measurements of Laterally Scaled Ga2O3 FETs
  • Yuichi Oshima, National Institute for Materials Science, Japan
    Halide Vapor Phase Epitaxy of α-Ga2O3
  • Man Hoi Wong, National Institute of Information and Communications Technology, Japan
    β-Ga2O3 MOSFETs with Nitrogen-Ion-Implanted Back-Barrier: DC Performance and Trapping Effects
  • Huili Grace Xing, Cornell University, USA
    Ga2O3 Power Schottky Barrier Diodes and Transistors: Design Principles and Experimental Validation
SS2: (Special session) Hexagonal boron nitride
  • Julien Barjon, University of Versailles Saint-Quentin, France
    Luminescence Efficiency of Hexagonal Boron Nitride
  • Lee Bassett, University of Pennsylvania, USA
    Spin-Dependent Quantum Emission from Defects in Hexagonal Boron Nitride
  • James Edgar, Kansas State University, USA
    Atmospheric Pressure Solution Growth of Monoisotopic Hexagonal Boron Nitride
  • Sergei Novikov, University of Nottingham, UK
    High-Temperature Plasma-Assisted Molecular Beam Epitaxy of hBN Layers
  • Kenji Watanabe, National Institute for Materials Science, Japan
    Observation of Impurity Incorporated Domain in h-BN Single Crystals