History of CSW
ISCS is the preeminent international conference in the field of III-V, II-VI, and IV-IV semiconductors. The ISCS series was initiated in 1966 under the name of “International Symposium on GaAs”. Later, in 1970 (the 3rd conference), the name of the conference was changed to “International Symposium on GaAs and Related Compounds” in order to cover not only GaAs but also GaP, InP, and their alloys in the scope of the conference. Since 1994 (the 21st conference), the conference name has been changed to “International Symposium on Compound Semiconductors (ISCS)”. The current name reflects the broadening of the conference scope due to the wide variety of compound semiconductors vital to materials for modern electronic and optoelectronic devices. IPRM is the major conference worldwide on Indium Phosphide and Related Materials, from physics to applications. The first conference was held in in 1989, Norman, OK, USA. The IPRM technical conference and exhibit is held yearly and its location alternates between North America, the Pacific Rim and Europe.
Following the great success of CSW2018 in Boston, USA, and CSW2017 in Berlin, Germany, CSW2019 is a joint venue for the 46th International Symposium on Compound Semiconductors (ISCS) and the 31st International Conference on Indium Phosphide and Related Materials (IPRM). CSW2019 aims to be the premier forum for science, technology, and applications in all areas of compound semiconductors.
CSW2019 covers all aspects of compound semiconductors – including growth, processing, devices, physics, spintronics, quantum information, MEMS/NEMS, sensors, solar cells, and novel applications. The conference deals with III-V compounds such as GaAs, InP, and GaN; II-VI compounds such as ZnSe and ZnS; carbon related materials; oxide semiconductors; organic semiconductors etc. When you submit an abstract, please select one of the following submission categories.
- A: Epitaxy, fabrication, and related technologies
- Epitaxy, Growth, Fabrication, Advanced characterization
- B: RF electron devices
- Microwave, Millimeter-wave, Terahertz devices, HEMTs, HBTs, RTDs, III-V MOSFETs
- C: High power electron devices
- Wide bandgap materials, Heterostructure devices, MOS devices, Vertical devices, High voltage, Device process and characterization
- D: Photonic devices and related technologies
- Optoelectronic devices and integration, Photonic integrated circuits, Si photonics, Photovoltaic
- E: Physics, spintronics, and novel device concepts
- Spin related effect and devices, Quantum dots and wires, Semiconductor/superconductor hybrid structures, Neuromorphic devices, Topological insulators and superconductors
- F: Nanocharacterization and nanostructures
- Quantum dots, Nanowires, Colloids, Atomic-scale characterization (Atom probe, STM, TEM, Synchrotron, etc.)
- G: GaN and related semiconductors
- Epitaxial growth, Bulk growth, Ternary and quaternary compounds, Reliability, Interface states, Etching, Defects
- H: Oxide semiconductors
- Oxide semiconductor bulks, Thin films, Heterostructure (Ga2O3 is covered in SS1), Growth and doping, Characterization, Devices, New oxide materials and physics
- I: Nanocarbon and novel 2D materials
- Graphene, Carbon nanotube, 2D materials, Transition Metal Dichalcogenides
- J: Organic semiconductors and flexible materials
- Organic electronics, Flexible electronics, Organic transistors, Organic light-emitting devices, Organic photovoltaics, Bio-materials and sensors, Organic-inorganic hybrid materials
- SS1: (Special session) Gallium oxide: materials and devices
- Nowadays, gallium oxide (Ga2O3) has gained great attention as a new ultra-wide bandgap semiconductor. The big appeal of Ga2O3 from the viewpoint of material properties is its extremely large bandgap of over 4.5 eV. The availability of large melt-grown Ga2O3 bulk single crystals is another important benefit, because low-cost mass production of high-quality, large-diameter native Ga2O3 wafers becomes possible.
The special session “Gallium oxide: materials and devices” introduces current status and future prospects of Ga2O3 technologies, covering a variety of topics such as epitaxial growth of thin films and heterostructures, material characterization, and device processing and characterization of field-effect transistors and diodes.
- SS2: (Special session) Hexagonal boron nitride
- Fifteen years ago, Watanabe and Taniguchi reported the synthesis of high-purity hexagonal boron nitride (hBN). This groundbreaking result revolutionised the physics and applications of this lamellar compound, which had been used in the industry for a long time. Watanabe and Taniguchi first highlighted the potential of this semiconductor for deep UV optoelectronics. However, with a honey-comb structure based on sp2 covalent bonds similar to graphene, hBN has gained a great deal of attention in the community of 2D materials.
The “Special session on hBN” in CSW2019 will be the occasion for discussing the current and future challenges in hBN research, with a broad scope covering synthesis, characterization, spectroscopy, single photon sources, theory, device fabrication…